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IRFF9220 Datasheet PDF

International Rectifier IRFF9220

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance.
Part No. IRFF9220
Datasheet IRFF9220 Download
Manufacturer
International Rectifier
Description HEXFETTRANSISTORS
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IRFF9220 datasheet page 1 preview

FEATURES

: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -2.5 -1.6 -10 20 0.16 ±20 180 — — -5.0 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 0.98(typical) Units A W W/°C V mJ A mJ V/ns o C g 1 01/22/01 IRFF9220

ELECTRICAL CHARACTERISTICS

Parameter BVDSS ∆BVDSS/∆T J RDS(on) VGS(th) gfs IDSS @ Tj = 25°C (Unless Otherwise Specified) Min -200 — — — -2.0 1.0 — — — — 4.0 1.1 0.8 — — — — — Typ Max Units — -0.22 — — —...
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