International Rectifier IRFH5053PbF
HEXFET Power MOSFET
| Part No. | IRFH5053PbF |
|---|---|
| Datasheet | IRFH5053PbF Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l l HEXFET® Power MOSFET 3 Phase Boost ConverterAPPLICATIONS
Secondary Side Synchronous Rectification VDSS 100V RDS(on) max 18mΩ@VGS = 10V Qg 24nC Benefits l l l l l l l l Very low RDS(ON) at 10V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260°C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering D D D D S S S G PQFNABSOLUTE MAXIMUM RATINGS
Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 100 ± 20 9.3 7.4 46 75 3.1 2.0 0.025 -55 to + 150 Units V A g Power Dissipation g Power Dissipation c W W/°C °C Linear Derating Factor Operating Junction and g Storage Temperature Range Thermal Resistance Parameter RθJC RθJA Junction-to-Case f Typ. ––– ––– Max.
