International Rectifier IRFIB7N50L
Power MOSFET
| Part No. | IRFIB7N50L |
|---|---|
| Datasheet | IRFIB7N50L Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
● Zero Voltage Switching SMPS● Telecom and Server Power Supplies
● Uninterruptible Power Supplies
● Motor Control applications HEXFET® Power MOSFET VDSS RDS(on) typ. Trr typ. ID 500V 320mΩ 85ns 6.8A
FEATURES AND BENEFITS
● SuperFast body diode eliminates the need for external diodes in ZVS applications.● Lower Gate charge results in simpler drive requirements.
● Enhanced dv/dt capabilities offer improved ruggedness.
● Higher Gate voltage threshold offers improved noise immunity. TO-220 Full-Pak
ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Max. 6.8 4.3 27 46 Units A W VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage e Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range 0.37 ±30 24 -55 to + 150 W/°C V V/ns °C Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Diode Characteristics x x 300 (1.6mm from case ) 10lb in (1.1N m) Symbol Parameter Min.
