International Rectifier IRFIB8N50K
HEXFET Power MOSFET
| Part No. | IRFIB8N50K |
|---|---|
| Datasheet | IRFIB8N50K Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current VDSS 500V RDS(on) typ. 290mΩ ID 6.7A TO-220 FULL-PAKABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max. 6.7 4.2 27 45 0.36 ±30 17 -55 to + 150 Units A W W/°C V V/ns °C c PD @TC = 25°C VGS dv/dt TJ TSTG Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw e 300 (1.6mm from case ) 1.1(10) N●m (lbf●in) Avalanche Characteristics EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current c d Typ. ––– ––– ––– Max. 290 6.7 4.5 Units mJ A mJ Repetitive Avalanche Energy c Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient Typ. ––– ––– Max.
