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IRFIBC30GPBF Datasheet PDF

International Rectifier IRFIBC30GPBF

HEXFET Power MOSFET

Part No. IRFIBC30GPBF
Datasheet IRFIBC30GPBF Download
Manufacturer
International Rectifier
Description HEXFET Power MOSFET
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IRFIBC30GPBF datasheet page 1 preview
PD - 95611 IRFIBC30GPbF
● Lead-Free 1 7/29/04 IRFIBC30GPbF 2 IRFIBC30GPbF 3 IRFIBC30GPbF 4 IRFIBC30GPbF 5 IRFIBC30GPbF 6 IRFIBC30GPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations
● Low Stray Inductance
● Ground Plane
● Low Leakage Inductance Current Transformer + + -
● dv/dt controlled by RG
● ISD controlled by Duty Factor "D"
● D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig. 14 For N and P Channel HEXFETS 7 IRFIBC30GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information E X AM P L E : T H IS IS AN IR F I8 4 0 G W IT H AS S E...
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