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IRFM450 Datasheet Power MOSFET

Manufacturer: IRF

Overview: PD - 90493F POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRFM450 IRFM450 JANTX2N7228 JANTXV2N7228 REF: MIL-PRF-19500/592 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY ® RDS(on) 0.415 Ω ID 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.

Datasheet Details

Part number IRFM450
Manufacturer IRF
File Size 472.18 KB
Description POWER MOSFET
Datasheet IRFM450-IRF.pdf

Key Features

  • n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ P.

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