IRFR2607ZPbF Datasheet PDF | International Rectifier

International Rectifier IRFR2607ZPbF

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Part No.	IRFR2607ZPbF
Datasheet	IRFR2607ZPbF Download
Manufacturer	International Rectifier
Description	Power MOSFET
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FEATURES

l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G HEXFET® Power MOSFET D VDSS = 75V RDS(on) = 22mΩ

DESCRIPTION

Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. S ID = 42A D-Pak I-Pak IRFR2607ZPbF IRFU2607ZPbF

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Max. 45 32 42 180 110 Units A W Linear Derating Factor VGS Gate-to-Source Voltage dEAS (Thermally limited) Single Pulse Avalanche Energy hEAS (Tested ) Single Pulse Avalanche Energy Tested Value ÃIAR Avalanche Current gEAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Tempe...