DESCRIPTION
G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. The straight lead, I-Pak, version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ABSOLUTE MAXIMUM RATINGS
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance RθJC RθJA RθJA Parameter Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient PD - 94393 IRFR3411 IRFU3411 HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 44mΩ ID = 32A S D-Pak IRFR3411 I-Pak IRFU3411 Max.
International Rectifier
