IRFR3505PbF Datasheet PDF | International Rectifier

International Rectifier IRFR3505PbF

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Part No.	IRFR3505PbF
Datasheet	IRFR3505PbF Download
Manufacturer	International Rectifier
Description	Power MOSFET
Buy	Stock & Price

FEATURES

l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G

DESCRIPTION

Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. PD - 95511B IRFR3505PbF IRFU3505PbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.013Ω S ID = 30A D-Pak IRFR3505PbF I-Pak IRFU3505PbF

ABSOLUTE MAXIMUM RATINGS

ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Cur...