International Rectifier IRFR3607PBF
Power MOSFET
| Part No. | IRFR3607PBF |
|---|---|
| Datasheet | IRFR3607PBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97312B IRFR3607PbF IRFU3607PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) S ID (Package Limited) 75V 7.34mΩ c 9.0mΩ 80A 56A D S S D G G D-Pak I-Pak IRFR3607PbF IRFU3607PbF G Gate D Drain S SourceABSOLUTE MAXIMUM RATINGS
Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Wire Bond Limited) d Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage f Peak Diode Recovery TJ Operating Junction and TSTG Storage Te...
