International Rectifier IRFR3704Z
HEXFET Power MOSFET
APPLICATIONS
l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET IRFR3704Z IRFU3704Z Qg 9.3nC 8.4m: VDSS RDS(on) max 20V D-Pak IRFR3704Z I-Pak IRFU3704ZABSOLUTE MAXIMUM RATINGS
Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ± 20 60 42 Units V A f f 240 48 24 0.32 -55 to + 175 300 (1.6mm from case) W/°C °C W Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient Typ.