International Rectifier IRFR3707ZCPBF
HEXFET Power MOSFET
IRFR3707ZCPBF Specifications
- Drain-Source Resistance : 9.5mΩ
- Min Breakdown Voltage : 30V
- Terminals : 2
- Max Power Dissipation : 50W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | IRFR3707ZCPBF |
|---|---|
| Datasheet | IRFR3707ZCPBF Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current IRFR3707ZCPbF IRFU3707ZCPbF HEXFET® Power MOSFET VDSS RDS(on) max 30V 9.5m: Qg 9.6nC D-Pak IRFR3707ZCPbF I-Pak IRFU3707ZCPbFABSOLUTE MAXIMUM RATINGS
Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 56 39 Units V A f f 220 50 25 0.33 -55 to + 175 300 (1.6mm from case) W/°C °C W Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient Typ.
