International Rectifier IRFR3709Z
HEXFET Power MOSFET
| Part No. | IRFR3709Z |
|---|---|
| Datasheet | IRFR3709Z Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET IRFR3709Z IRFU3709Z Qg 17nC 6.5m: VDSS RDS(on) max 30V D-Pak IRFR3709Z I-Pak IRFU3709ZABSOLUTE MAXIMUM RATINGS
Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 86 61 Units V A f f 340 79 39 0.53 -55 to + 175 W/°C °C W Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient Typ.
