International Rectifier IRFR3711
Power MOSFET
| Part No. | IRFR3711 |
|---|---|
| Datasheet | IRFR3711 Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current l IRFR3711 IRFU3711 HEXFET® Power MOSFET VDSS 20V RDS(on) max 6.5mΩ ID 110A D-Pak IRFR3711 I-Pak IRFU3711ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 20 110 69 440 2.5 120 0.96 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient Typ. ––– ––– ––– Max.
