International Rectifier IRFR3711Z
HEXFET Power MOSFET
| Part No. | IRFR3711Z |
|---|---|
| Datasheet | IRFR3711Z Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current VDSS 20V PD - 94651B IRFR3711Z IRFU3711Z HEXFET® Power MOSFET RDS(on) max Qg 5.7m: 18nC D-Pak IRFR3711Z I-Pak IRFU3711ZABSOLUTE MAXIMUM RATINGS
Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current gMaximum Power Dissipation gMaximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC Junction-to-Case gÃRθJA Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient Notes through are on page 11 Max.
