IRFR4105Z Datasheet PDF

FEATURES

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● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 24.5mΩ ID = 30A

DESCRIPTION

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D-Pak IRFR4105Z I-Pak IRFU4105Z

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max. 30 21 120 48 Units A W W/°C V mJ A mJ ™ PD @TC = 25°C Power Dissipation VGS EAS (Thermally l...