FEATURES
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax ÿl Lead-Free G IRFU48ZPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 11mΩ DESCRIPTION
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. ID = 42A S D-Pak IRFR48ZPbF I-Pak IRFU48ZPbF ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Max. 62 44 42 250 91 Units A W Linear Derating Factor VGS d E AS (Thermally limited) h EAS (Tested ) Ã IAR g E A R Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy TJ Operating Junction and TST...
International Rectifier
