International Rectifier IRFR540Z
HEXFET Power MOSFET
| Part No. | IRFR540Z |
|---|---|
| Datasheet | IRFR540Z Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
FEATURES
lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to TjmaxDESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. GABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dEAS (Thermally limited) Single Pulse Avalanche Energy EAS (Tested ) hSi...
