International Rectifier IRFR825TRPbF
Power MOSFET
| Part No. | IRFR825TRPbF |
|---|---|
| Datasheet | IRFR825TRPbF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
● Zero Voltage Switching SMPS● Uninterruptible Power Supplies
● Motor Control applications VDSS RDS(on) typ. Trr typ. ID 500V 1.05Ω 92ns 6.0A D
FEATURES AND BENEFITS
● Fast body diode eliminates the need for external diodes in ZVS applications.● Lower Gate charge results in simpler drive requirements.
● Higher Gate voltage threshold offers improved noise immunity. S G D-Pak IRFR825TRPbF
ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Max. 6.0 3.9 24 119 Units A W VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage ePeak Diode Recovery dv/dt Operating Junction and Storage Temperature Range 1.0 ± 20 9.9 -55 to + 150 W/°C V V/ns °C Soldering Temperature, for 10 seconds Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current Ã(Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current 300 (1.6mm from case ) Min.
