International Rectifier IRFR8314PbF
Power MOSFET
| Part No. | IRFR8314PbF |
|---|---|
| Datasheet | IRFR8314PbF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
●Low Voltage Power Tools Benefits●Fully Characterized Avalanche Voltage and Current
●Lead-Free, RoHS Compliant HEXFET® Power MOSFET VDSS 30 V D RDS(on) max (@ VGS = 10V) 2.2 m G (@ VGS = 4.5V) 3.1 S Qg (typical) 40 nC ID (Silicon Limited) ID (Package Limited) 179 90A A D S G D-Pak G Gate D Drain S Source Base part number Package Type IRFR8314PbF D-Pak Standard Pack Form Quantity Tape and Reel 2000 Absolute Maximum Rating Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TC = 100°C TJ Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol Parameter R●JC Junction-to-Case R●JA Junction-to-Ambient (PCB Mount) R●JA Junction-to-Ambient Orderable Part Number IRFR8314TRPbF Max.
