International Rectifier IRFS3004PBF
Power MOSFET
| Part No. | IRFS3004PBF |
|---|---|
| Datasheet | IRFS3004PBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D HEXFET® Power MOSFET Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D D 40V 1.4mΩ 1.75mΩ 340Ac 195A S D G D S G S G D S TO-220AB IRFB3004PbF D2Pak IRFS3004PbF TO-262 IRFSL3004PbF G D S Gate Drain Max. 340c 240c 195 1310 380 2.5 ± 20 4.4 -55 to + 175 300 10lbfxin (1.1Nxm) 300 See Fig. 14, 15, 22a, 22b Source Units AABSOLUTE MAXIMUM RATINGS
Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current d Max...
