IRFS3006-7PPbF Datasheet PDF

APPLICATIONS

l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free HEXFET® Power MOSFET D VDSS :RDS(on) typ. 60V 1.5m :max. 2.1m cID (Silicon Limited) 293A S ID (Package Limited) 240A D S SS S S G D2Pak 7 Pin G Gate D Drain S Source

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) dPulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage fPeak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 secon...