International Rectifier IRFS31N20DPBF
Power MOSFET
| Part No. | IRFS31N20DPBF |
|---|---|
| Datasheet | IRFS31N20DPBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Frequency DC-DC converters l Lead-Free VDSS 200V IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF HEXFET® Power MOSFET RDS(on) max ID 0.082Ω 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbFABSOLUTE MAXIMUM RATINGS
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 31 21 124 3.1 200 1.3 ± 30 2.1 -55 to + 175 300 (1.6mm from case ) 10 lbf●in (1.1N●m) Units A W W/°C V V/ns °C Applicable Off L...
