International Rectifier IRFS3507
HEXFET Power MOSFET
| Part No. | IRFS3507 |
|---|---|
| Datasheet | IRFS3507 Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G S HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID 75V 7.0m: 8.8m: 97A G DS TO-220AB IRFB3507 G DS D2Pak IRFS3507 G DS TO-262 IRFSL3507ABSOLUTE MAXIMUM RATINGS
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Single Pulse Avalanche Energy e Avalanche Current c Repetitive Avalanche Energy g Max. 97c 69c 390 190 1.3 ± 20 5.0 -55 to + 175 300 10lbxin (1.1Nxm) 280 See Fig.
