International Rectifier IRFS38N20DPBF
Power MOSFET
| Part No. | IRFS38N20DPBF |
|---|---|
| Datasheet | IRFS38N20DPBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High frequency DC-DC converters l Plasma Display Panel l Lead-Free IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET® Power MOSFETKEY PARAMETERS
VDS VDS (Avalanche) min. RDS(ON) max @ 10V TJ max 200 260 54 175 V V m: °C Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l TO-220AB IRFB38N20DPbF D2Pak IRFS38N20DPbF TO-262 IRFSL38N20DPbFABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 38* 27* 180 3.8 230* 1.5*...
