International Rectifier IRFS4020PbF
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.FEATURES
● Key parameters optimized for Class-D audio amplifier applications● Low RDSON for improved efficiency
● Low QG and QSW for better THD and improved efficiency
● Low QRR for better THD and lower EMI
● 175°C operating junction temperature for ruggedness
● Can deliver up to 300W per channel into 8Ω load in
KEY PARAMETERS
VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. 200 85 18 6.7 RG(int) typ. TJ max 3.2 175 D D D V mΩ nC nC Ω °C half-bridge configuration amplifier G DS G DS G S D2Pak IRFS4020PbF TO-262 IRFSL4020PbF GDS Gate Drain SourceDESCRIPTION
Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. Absolute Ma...