IRFS4115PbF Datasheet PDF

APPLICATIONS

l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 96198A IRFS4115PbF IRFSL4115PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 150V 10.3m: 12.1m: ID (Silicon Limited) c99A S ID (Package Limited) 195A D S G D2Pak IRFS4115PbF D S D G TO-262 IRFSL4115PbF G Gate

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Wire Bond Limited) dPulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage fPeak Diode Recovery TJ Operating Junction and TSTG Storage Te...