IRFS4127PbF Datasheet PDF

APPLICATIONS

l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 96177 IRFS4127PbF IRFSL4127PbF HEXFET® Power MOSFET D VDSS 200V :RDS(on) typ. 18.6m max. 22m: S ID 72A DD S G D2Pak IRFS4127PbF S D G TO-262 IRFSL4127PbF G Gate D Drain S Source

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM Continuous Drain Current, VGS @ 10V cPulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage ePeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Th...