FEATURES
l Advanced Process Technology l KEY PARAMETERS
Optimized for PDP Sustain, Energy Recovery and Pass Switch APPLICATIONS
l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch APPLICATIONS
l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability IRFS4228PbF IRFSL4228PbF KEY PARAMETERS
150 180 12 170 175 D VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100°C TJ max D V V m: A °C D G S S D G D2Pak IRFS4228PbF D S D G TO-262 IRFSL4228PbF S G Gate Drain Source DESCRIPTION
Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Absolute Maximu...
International Rectifier
