FEATURES
l Advanced Process Technology l KEY PARAMETERS
Optimized for PDP Sustain, Energy Recovery and Pass Switch APPLICATIONS
l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch APPLICATIONS
l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability KEY PARAMETERS
VDS min 250 V VDS (Avalanche) typ. RDS(ON) typ. @ 10V 300 V 42 m: IRP max @ TC= 100°C 91 A TJ max 175 °C D D G S S D G D2Pak G D S Gate Drain Source DESCRIPTION
Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. ABSOLUTE MAXIMUM RATINGS
Parameter VGS ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC...
International Rectifier
