IRFS4310PbF Datasheet PDF

APPLICATIONS

l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF HEXFET® Power MOSFET D VDSS 100V :RDS(on) typ. 5.6m :G max. 7.0m S ID 130A DS G TO-220AB IRFB4310PbF DS G D2Pak IRFS4310PbF DS G TO-262 IRFSL4310PbF

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V dPulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dV/dt Gate-to-Source Voltage fPeak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteri...