International Rectifier IRFS4321PBF
HEXFET Power MOSFET
APPLICATIONS
l Motion ControlAPPLICATIONS
l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance l Improved Diode Recovery Improves Switching & EMI Performance l 30V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA VDSS RDS(on) ID typ. max. D G S HEXFET® Power MOSFET 150V 12m: 15m: 85A c DD S D G S GD D2Pak TO-262 IRFS4321PbF IRFSL4321PbF G Gate D Drain S SourceABSOLUTE MAXIMUM RATINGS
Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor VGS EAS (Thermally limited) TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy e Operating Junction and Storage Temperature Range Solderi