International Rectifier IRFS4510PbF
Power MOSFET
| Part No. | IRFS4510PbF |
|---|---|
| Datasheet | IRFS4510PbF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 97771 IRFS4510PbF IRFSL4510PbF HEXFET® Power MOSFET D VDSS 100V RDS(on) typ. 11.3mΩ max. 13.9mΩ S ID (Silicon Limited) 61A D D DS G D2Pak IRFS4510PbF DS G TO-262 IRFSL4510PbF G Gate D Drain S SourceABSOLUTE MAXIMUM RATINGS
Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) cPulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage ePeak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting t...
