IRFS4610 Datasheet | IRF

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits G l Improved Gate, Avalanche and Dynamic d V/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode d V/dt and d I/dt Capability - 96906C IRFB4610 IRFS4610 IRFSL4610 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 100V 11m: 14m: 73A G DS TO-220AB IRFB4610 G DS D2Pak IRFS4610 G DS TO-262 IRFSL4610 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current f Maximum Power Dissipation Linear Derating Factor VGS d V/dt Gate-to-Source Voltage Peak Diode Recovery e TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy f Thermal Resistance Symbol...