International Rectifier IRFS4615PBF
N-Channel HEXFET Power MOSFET
| Part No. | IRFS4615PBF |
|---|---|
| Datasheet | IRFS4615PBF Download |
| Manufacturer |  International Rectifier |
| Description | N-Channel HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D G S VDSS RDS(on) typ. max. ID D 150V 34.5m: 42m: 33A D S G G D S D2Pak IRFS4615PbF TO-262 IRFSL4615PbF G D S Gate Drain SourceABSOLUTE MAXIMUM RATINGS
Symbol ID @ TC = 25°C ID @ TC = 100°C PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Max. 33 24 140 144 0.96 ± 20 38 -55 to + 175 300 Units A W W/°C V V/ns IDM Pulsed Drain Current c e °C Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy c d c i 109 See Fig.
