IRFS510A Datasheet PDF

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.) 1 Ο IRFS510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 4.5 A TO-220F 2 3 1.Gate 2. Drain 3. Source

ABSOLUTE MAXIMUM RATINGS

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Ο Ο Ο Value 100 4.5 3.2 1 O Units V A A V mJ A mJ V/ns W W/ C Ο 20 + _ 20 54 4.5 2.1 6.5 21 0.14 - 55 to +175 O 1 O 1 O 3 O 2 Ο C 300 Thermal Resistance Symbol Rθ JC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max.