IRFS52N15DPBF Datasheet PDF

APPLICATIONS

l High frequency DC-DC converters l Plasma Display Panel Benefits l Low Gate-to-Drain Charge to Reduce\ Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF HEXFET® Power MOSFET

KEY PARAMETERS

VDS VDS (Avalanche) min. RDS(ON) max @ 10V TJ max 150 200 32 175 V V m: °C TO-220AB IRFB52N15DPbF D2Pak TO-262 IRFS52N15DPbF IRFSL52N15DPbF

ABSOLUTE MAXIMUM RATINGS

ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V ‡ Continuous Drain Current, VGS @ 10V ‡ Pulsed Drain Current  Power Dissipation ‡ Power Dissipation ‡ Linear Derating Factor ‡ Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Thermal Resistance Max. 51* 3...