International Rectifier IRFS5615PbF
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.| Part No. | IRFS5615PbF |
|---|---|
| Datasheet | IRFS5615PbF Download |
| Manufacturer |  International Rectifier |
| Description | Digital Audio MOSFET |
| Buy | Stock & Price |
FEATURES
●KEY PARAMETERS
Optimized for Class-D Audio AmplifierAPPLICATIONS
● Low RDSON for Improved Efficiency● Low QG and QSW for Better THD and Improved Efficiency
● Low QRR for Better THD and Lower EMI
● 175°C Operating Junction Temperature for Ruggedness
● Can Deliver up to 300W per Channel into 4Ω Load in Half-Bridge Configuration Amplifier
KEY PARAMETERS
VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max 150 34.5 26 11 2.7 175 DD D V m: nC nC Ω °C G S G S D G S D2Pak TO-262 IRFS5615PbF IRFSL5615PbF GDS Gate Drain SourceDESCRIPTION
Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. Absolute Ma...
