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IRFS9N60A - SMPS MOSFET

Key Features

  • ) YY = Y E A R W W = W EEK 8 www. irf. com IRFS9N60A Tape & Reel Information D2Pak TR R 1 .6 0 (.0 63 ) 1 .5 0 (.0 59 ) 4 .1 0 ( .1 6 1) 3 .9 0 ( .1 5 3) 1.60 (.06 3) 1.50 (.05 9) 0 .3 68 (.0 145 ) 0 .3 42 (.0 135 ) F E ED D IRE C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1.60 (.457 ) 1 1.40 (.449 ) 15 .4 2 (.60 9) 15 .2 2 (.60 1) 24.30 (.95 7) 23.90 (.94 1) TR L 10 .9 0 (.42 9) 10 .7 0 (.42 1) 1.75 (.0 69 ) 1.25 (.0 49 ) 16 .1 0 (.63 4) 15 .9 0 (.62 6) 4 .7 2 (.13 6) 4 .5 2 (.17 8) F E.

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Datasheet Details

Part number IRFS9N60A
Manufacturer IRF
File Size 105.20 KB
Description SMPS MOSFET
Datasheet download datasheet IRFS9N60A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 91817A SMPS MOSFET IRFS9N60A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l VDSS 600V RDS(on) max 0.75Ω ID 9.2A G DS D2Pak Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 9.2 5.