IRFSL11N50A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best bination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
- Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
11 7.0 44 190 1.3 ± 30 390 11 19 4.1 -55 to + 175 300 (1.6mm from case )
Units
A W W/°C V m J A m J V/ns °C
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case Junction-to-Ambient
Typ.
- -
- -
- -
Max.
0.75 40
Units
°C
.irf.
9/2/99
Electrical Characteristics @ TJ = 25°C (unless otherwise...
