IRFSL11N50A Description
Third Generation HEXFETs from International Rectifier provide the designer with the best bination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. T O -26 2 Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating...