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IRFSL11N50A - HEXFET Power MOSFET

General Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

Key Features

  • Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www. irf. com/ Data and specifications subject to change without notice. 9/99 8 www. irf. com.

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Datasheet Details

Part number IRFSL11N50A
Manufacturer IRF
File Size 123.56 KB
Description HEXFET Power MOSFET
Datasheet download datasheet IRFSL11N50A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 91847A IRFSL11N50A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements D VDSS = 500V G S RDS(on) = 0.55Ω ID = 11A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.