Datasheet Details
| Part number | IRFSL11N50A |
|---|---|
| Manufacturer | IRF |
| File Size | 123.56 KB |
| Description | HEXFET Power MOSFET |
| Datasheet | IRFSL11N50A_IRF.pdf |
|
|
Overview: PD- 91847A IRFSL11N50A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements D VDSS = 500V G S RDS(on) = 0.
| Part number | IRFSL11N50A |
|---|---|
| Manufacturer | IRF |
| File Size | 123.56 KB |
| Description | HEXFET Power MOSFET |
| Datasheet | IRFSL11N50A_IRF.pdf |
|
|
|
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
11 7.0 44 190 1.3 ± 30 390 11 19 4.1 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient Typ.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFSL11N50A | Power MOSFET | Vishay |
 |
IRFSL11N50APBF | HEXFET Power MOSFET | International Rectifier |
| Part Number | Description |
|---|---|
| IRFSL17N20D | Power MOSFET |
| IRFSL23N15D | Power MOSFET |
| IRFSL23N20D | Power MOSFET |
| IRFSL31N20D | Power MOSFET |
| IRFSL3207 | HEXFET Power MOSFET |
| IRFSL3307 | HEXFET Power MOSFET |
| IRFSL33N15D | Power MOSFET |
| IRFSL3507 | HEXFET Power MOSFET |
| IRFSL38N20D | Power MOSFET |
| IRFSL41N15D | HEXFET Power MOSFET |