Datasheet4U Logo Datasheet4U.com

IRFSL3207 - HEXFET Power MOSFET

Key Features

  • ow based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
  • f ZthJC(D, tav) = Transient thermal resistance, see Figures 13).

📥 Download Datasheet

Datasheet Details

Part number IRFSL3207
Manufacturer IRF
File Size 385.00 KB
Description HEXFET Power MOSFET
Datasheet download datasheet IRFSL3207 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFSL3207 Power MOSFET International Rectifier
IRFSL3207PBF Power MOSFET International Rectifier
IRFSL3207ZPBF Power MOSFET International Rectifier
IRFSL3206 Power MOSFET International Rectifier
IRFSL3206PBF Power MOSFET International Rectifier

Other Datasheets by IRF

Part Number Description
IRFSL31N20D Power MOSFET
IRFSL3307 HEXFET Power MOSFET
IRFSL33N15D Power MOSFET
IRFSL3507 HEXFET Power MOSFET
IRFSL38N20D Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96893A IRFB3207 IRFS3207 IRFSL3207 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 75V 3.6m: 4.