IRFSL59N10D
- 93890
SMPS MOSFET
IRFB59N10D IRFS59N10D IRFSL59N10D
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters
VDSS
100V
RDS(on) max
0.025Ω
59A
Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characterized Avalanche Voltage IRFB59N10D and Current
D2Pak IRFS59N10D
TO-262 IRFSL59N10D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt
- Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
59 42 236 3.8 200 1.3 ± 30 3.3 -55 to + 175 300 (1.6mm from case ) 10 lbf- in (1.1N- m)
Units
A W W/°C V...
