International Rectifier IRFU1018EPbF
Power MOSFET
| Part No. | IRFU1018EPbF |
|---|---|
| Datasheet | IRFU1018EPbF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97129 IRFR1018EPbF IRFU1018EPbF HEXFET® Power MOSFET D VDSS 60V RDS(on) typ. 7.1m: max. 8.4m: G ID (Silicon Limited) 79A c S ID (Package Limited) 56A D-Pak I-Pak IRFR1018EPbF IRFU1018EPbF G GateABSOLUTE MAXIMUM RATINGS
Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dv/dt TJ TSTG Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering T...
