IRFU120Z Datasheet PDF

FEATURES

● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax G PD - 94754 IRFR120Z IRFU120Z HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 190mΩ ID = 8.7A S

DESCRIPTION

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D-Pak IRFR120Z I-Pak IRFU120Z

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derati...