International Rectifier IRFU15N20D
SMPS MOSFET
| Part No. | IRFU15N20D |
|---|---|
| Datasheet | IRFU15N20D Download |
| Manufacturer |  International Rectifier |
| Description | SMPS MOSFET |
| Buy | Stock & Price |
APPLICATIONS
High frequency DC-DC converters IRFR15N20D IRFU15N20D HEXFET® Power MOSFET l VDSS 200V RDS(on) max 0.165Ω ID 17A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l D-Pak IRFR15N20D I-Pak IRFU15N20DABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation* Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 17 12 68 140 3.0 0.96 ± 30 8.3 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. ––– ––– ––– Max.
