International Rectifier IRFU220NPBF
Power MOSFET
| Part No. | IRFU220NPBF |
|---|---|
| Datasheet | IRFU220NPBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High frequency DC-DC converters l Lead-Free IRFR220NPbF IRFU220NPbF HEXFET® Power MOSFET VDSS RDS(on) max (mΩ) 200V 600 ID 5.0A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l D-Pak IRFR22ON I-Pak IRFU220NABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 5.0 3.5 20 43 0.71 ± 20 7.5 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input Forward Converters Notes through are on page 10 1 12/10/04 IRFR/U220NPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
