FEATURES
l l l l l l IRFR3504PbF IRFU3504PbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 40V RDS(on) = 9.2mΩ S DESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ID = 30A D-Pak IRFR3504 I-Pak IRFU3504 ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC ID @ TC ID @ TC IDM PD @TC = 25°C = 100°C = 25°C = 25°C Continuous Drain Current, VGS...
International Rectifier
