International Rectifier IRFU3518
HEXFET Power MOSFET
| Part No. | IRFU3518 |
|---|---|
| Datasheet | IRFU3518 Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High frequency DC-DC converters HEXFET® Power MOSFET VDSS 80V RDS(on) max 29mW ID 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current D-Pak IRFR3518 I-Pak IRFU3518ABSOLUTE MAXIMUM RATINGS
Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 80 ± 20 38 27 150 110 0.71 5.2 -55 to + 175 300 (1.6mm from case ) Units V A W W/°C V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient Typ. ––– ––– ––– Max. 1.4 40 110 Unit...
