International Rectifier IRFU3710Z
AUTOMOTIVE MOSFET
| Part No. | IRFU3710Z |
|---|---|
| Datasheet | IRFU3710Z Download |
| Manufacturer |  International Rectifier |
| Description | AUTOMOTIVE MOSFET |
| Buy | Stock & Price |
FEATURES
l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 100V G S RDS(on) = 18mΩ ID = 42ADESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D-Pak IRFR3710Z I-Pak IRFU3710ZABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM Max. 56 39 42 220 140 Units A...
