International Rectifier IRFU3806PbF
Power MOSFET
| Part No. | IRFU3806PbF |
|---|---|
| Datasheet | IRFU3806PbF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability GABSOLUTE MAXIMUM RATINGS
Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dv/dt Peak Diode Recovery e TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy d IAR Avalanche Current c EAR Repetitive Avalanche Energy f Thermal Resistance Symbol Parameter RθJC Junction-to-Case j RθCS Case-to-Sink, Flat Greased Surface RθJA Junction-to-Ambient ij PD - 97313 IRFR3806PbF IRFU3806PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max.
